BSC118N10NSGATMA1 vs BSC100N10NSFGATMA1 对比
详细并排对比 BSC118N10NSGATMA1 出自 Infineon 和 BSC100N10NSFGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 量产中规格对比
| 参数 | BSC118N10NSGATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| 封装 | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 C to +150 C | — |
| Technology | Trench MOSFET | MOSFET (Metal Oxide) |
| Lead Plating | Pb-free | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Series | — | OptiMOS |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| 工作温度范围 | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |