BSC340N08NS3GATMA1 vs ISZ028N03LF2SATMA1 Comparación
Comparación detallada lado a lado de BSC340N08NS3GATMA1 por Infineon y ISZ028N03LF2SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC340N08NS3GATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,81 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID, Tc) | 23 A | — |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | 83 W |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Rango de temperatura de funcionamiento | -55C to +150C | -55C to +175C (junction, typical) |
| Encapsulado | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8 FL (FL = flat lead) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 1 |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Estado RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |