BSC340N08NS3GATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of BSC340N08NS3GATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC340N08NS3GATMA1
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | BSC340N08NS3GATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC340N08NS3GATMA1 | β |
| Technology | OptiMOS 3 (N-Channel Trench) | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID, Tc) | 23 A | β |
| Continuous Drain Current (ID, Ta) | 7 A | β |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage VGS max | +/- 20 V | β |
| Power Dissipation (Tc) | 32 W | 83 W |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Operating Temperature Range | -55C to +150C | -55C to +175C (junction, typical) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS / Lead-Free | RoHS compliant, lead-free | β |
| Channel Type | Single N-Channel | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| RoHS Status | β | Compliant |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |