BSC340N08NS3GATMA1 vs ISZ028N03LF2SATMA1 Comparaison
Comparaison détaillée côte à côte de BSC340N08NS3GATMA1 par Infineon et ISZ028N03LF2SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSC340N08NS3GATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,81 | $0,49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC340N08NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench) | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID, Tc) | 23 A | — |
| Continuous Drain Current (ID, Ta) | 7 A | — |
| Pulsed Drain Current (IDM) | 92 A | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Power Dissipation (Tc) | 32 W | 83 W |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Plage de température de fonctionnement | -55C to +150C | -55C to +175C (junction, typical) |
| Boîtier | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TSDSON-8 FL (FL = flat lead) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 | 1 |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Channel Type | Single N-Channel | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Statut RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |