BSL215CH6327XTSA1 vs BSL316CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSL215CH6327XTSA1 por Infineon y BSL316CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSL215CH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,21 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary Pair | — |
| Drain-Source Voltage (V_DS) | 20 V | — |
| Continuous Drain Current (I_D) | 1.5 A | — |
| R_DS(on) Max @ V_GS=4.5V | 250 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Power Dissipation (P_D) | 500 mW | — |
| Encapsulado / Carcasa | PG-TSOP6-6 (6-pin TSOP) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C | -55C to +150C (junction) |
| Configuration | Half-bridge (1 N + 1 P) | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Technology | OptiMOS trench MOSFET | OptiMOS low-voltage MOSFET |
| Nivel MSL | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Part Family | — | OptiMOS small-signal complementary MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Encapsulado | — | PG-TSOP6-6 (TSOP6, 6-pin) |
| Channel Type | — | N-channel + P-channel (dual) |
| Recuento de pines | — | 6 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |