BSP129H6327XTSA1 vs BSL308CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSP129H6327XTSA1 por Infineon y BSL308CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSP129H6327XTSA1 - 240V N-Ch Depletion MOSFET | Infineon | SOT-223
BSP129H6327XTSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSP129H6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,30 | $0,21 |
| FET Type | N-Channel, Depletion Mode | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) at TA=25C | 350 mA | — |
| On-Resistance RDS(on) max | 4.2 ohm (some sources 6 ohm) | — |
| Power Dissipation (PD) at TA=25C | 1.8 W | — |
| Encapsulado | PG-SOT223-4 (SOT-223, 3+Tab) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55 C to +150 C (junction) | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage VGS(off) | [DATA_NEEDED: depletion threshold VGS(off)] | — |
| dv/dt Ruggedness | Yes (rated) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Process Technology | SIPMOS (vertical DMOS) | — |
| Drain Terminal | Tab (pin 4) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Sin halógenos | — | Yes (per Infineon product family convention) |