BSP129H6327XTSA1 vs BSL308CH6327XTSA1 비교

다음의 상세 나란히 비교: BSP129H6327XTSA1 제조: Infineon 및 BSL308CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSP129H6327XTSA1 BSL308CH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.30 $0.21
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
패키지 PG-SOT223-4 (SOT-223, 3+Tab) PG-TSOP6-6 (TSOP-6, 6 pins)
실장 유형 Surface Mount Surface Mount
동작 온도 -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 상태 Compliant Compliant
Lead-Free Yes Yes
MSL 레벨 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
동작 온도 범위 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
할로겐 프리 — Yes (per Infineon product family convention)

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