BSP129H6327XTSA1 vs BSL308CH6327XTSA1 对比

详细并排对比 BSP129H6327XTSA1 出自 Infineon 和 BSL308CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 ✓ 量产中

规格对比

参数 BSP129H6327XTSA1 BSL308CH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.30 $0.21
FET Type N-Channel, Depletion Mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) at TA=25C 350 mA —
On-Resistance RDS(on) max 4.2 ohm (some sources 6 ohm) —
Power Dissipation (PD) at TA=25C 1.8 W —
封装 PG-SOT223-4 (SOT-223, 3+Tab) PG-TSOP6-6 (TSOP-6, 6 pins)
安装类型 Surface Mount Surface Mount
工作温度 -55 C to +150 C (junction) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Threshold Voltage VGS(off) [DATA_NEEDED: depletion threshold VGS(off)] —
dv/dt Ruggedness Yes (rated) —
Automotive Qualification AEC-Q101 qualified —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Process Technology SIPMOS (vertical DMOS) —
Drain Terminal Tab (pin 4) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ low-voltage power MOSFETs
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
工作温度范围 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
无卤 — Yes (per Infineon product family convention)

数据手册与资源

浏览全部产品 创建 BOM 获取报价