BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon
N.º de pieza: BSP125H6433XTMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
BSP125H6433XTMA1 Descripción general
A small-signal power MOSFET is a discrete semiconductor that switches or amplifies low-level currents while remaining compatible with standard surface-mount assembly. In the broader taxonomy it sits under MOSFET -> FET -> discrete semiconductor -> power management. Its role is to provide a controllable conduction path whose on-resistance is set by a gate-source voltage, allowing it to act as a high-side switch, level shifter, or driver element in mixed-signal and automotive subsystems.
Key differentiating features include a 600V drain-source breakdown (V(BR)DSS), a 120 mA continuous drain current at TA, and a typical threshold voltage VGS(th) suitable for 5V/10V gate drive. The PG-SOT223-4 package provides a thermal pad tab (pin 4) that doubles as the drain connection, enabling direct heat extraction through PCB copper. The AEC-Q101 qualification plus RoHS and Pb-free plating make this part suited to in-cabin and body-electronics automotive modules.
Typical applications include automotive relay replacements, lamp drivers, high-side switches for 12V/24V vehicle body controllers, level shifters in industrial control, and small-signal switching in battery management modules. The high BVDSS of 600V also enables use in offline auxiliary supplies where the device sits on the secondary side.
When designing with BSP125H6433XTMA1, route the tab land pattern as the primary thermal path; expect roughly 80-100 C/W RthJA on a 1 square-inch 2oz copper pour. Use a gate-source resistor of 10k-100k to keep the device off during power-up. Source and load should share a small gate series resistor (10-100 ohm) to damp ringing in fast switching edges.
Alternativas directas para BSP125H6433XTMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSP125H6433XTMA1 (mismo factor de forma y huella) — difiere en Package, MSL Level, Operating Temperature Range, Automotive Qualification, Configuration.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →BSP125H6433XTMA1 Valores máximos y características eléctricas
| FET Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (V(BR)DSS) | 600 V |
| Continuous Drain Current (ID) at TA | 120 mA |
| Power Dissipation (PD) at TA | 1.8 W |
| Encapsulado | PG-SOT223-4 (3+tab) |
| Tipo de montaje | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Lead Plating | Pb-free |
| Estado RoHS | Compliant |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) |
| Configuration | Single N-Channel MOSFET |
Configuración de pines de BSP125H6433XTMA1
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain — MOSFET drain (internally bonded to tab) |
| Pin 3 | Source — MOSFET source |
| Pin 4 | Tab (Drain) — Exposed thermal tab - drain connection and heatsink |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
BSP125H6433XTMA1 es adecuado para 6 aplicacións: Automotive Body Control High-Side Switch, Automotive Relay Replacement, Offline Auxiliary Power Supply Switch, Industrial Level Shifter, Battery Management Module Switch, LED Driver High-Side Switch.
Automotive Body Control High-Side Switch
The BSP125H6433XTMA1's 600V V(BR)DSS and 120 mA continuous drain current make it well-suited as a high-side switch in automotive body controllers that drive lamps, relays, and small solenoids from a 12V or 24V battery rail. Its AEC-Q101 qualification means it survives the automotive temperature-cycling and humidity-bias stress tests required for in-cabin modules. Placed between the battery feed and the load with a gate pull-down resistor of 10-100 kohm, the part provides a logic-controlled switch that is far smaller and more reliable than an electromechanical relay. Compared with a discrete BJT, the MOSFET offers lower on-resistance and zero gate-drive current in steady state.
Recomendado
Automotive Relay Replacement
Mechanical automotive relays are bulky, slow, and prone to contact wear. The BSP125H6433XTMA1, with its 600V drain-source rating and 1.8W power dissipation in PG-SOT223-4, can replace a relay driving resistive or inductive loads up to 120 mA. A small gate series resistor (10-100 ohm) damps the ringing when switching inductive loads, and a freewheeling diode across the load protects the MOSFET from flyback transients. The AEC-Q101 qualification is critical here: it ensures the part survives underhood and in-cabin thermal stress over the vehicle lifetime.
Recomendado
Offline Auxiliary Power Supply Switch
On the secondary side of an offline AC-DC converter, the BSP125H6433XTMA1 acts as a small-signal switch for housekeeping functions such as bias supply gating or synchronous rectification in low-power adapters. The 600V BVDSS provides comfortable margin across rectified 230V AC mains (peak ~325V), so transients will not avalanche the device. Its 120 mA current rating is ample for bias-winding current in adapters below 5W. Mounted on a 1 square-inch copper pour, the tab drain keeps RthJA low enough for 1.8W continuous operation.
Recomendado
Industrial Level Shifter
Industrial controllers often need to translate 3.3V or 5V logic levels into 24V control signals for factory-automation actuators. The BSP125H6433XTMA1, with its high BVDSS and small SOT-223 footprint, serves as an open-drain level shifter or a high-side driver stage. A 10 kohm pull-up on the gate to 12V lets a microcontroller GPIO control the device; the source-tied load handles up to 120 mA. The wide 600V safety margin tolerates long cable transients on the 24V rail typical of factory floors.
Recomendado
Battery Management Module Switch
In a battery management system (BMS), the BSP125H6433XTMA1 functions as a small balancing or pre-charge switch in 12V/24V battery packs. The 600V rating is overkill for 24V packs but ensures ruggedness against load-dump transients in 24V truck systems. The 120 mA continuous rating is well-matched to balancing currents below 100 mA. The PG-SOT223-4 footprint allows tight placement near the cell-monitoring IC, minimizing trace inductance.
Recomendado
LED Driver High-Side Switch
The BSP125H6433XTMA1 can drive the high side of an LED string in automotive interior or exterior lighting applications, where AEC-Q101 qualification and a 600V transient safety margin are required. Driven from a constant-current source, the MOSFET acts as a linear current-regulator pass element for small LED arrays below 120 mA. The exposed tab on the PG-SOT223-4 package provides thermal relief; expect ~80-100 C/W RthJA on a standard 2oz copper pour.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSP125H6433XTMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSP125H6327XTSA1 | BSP125L6433 | BSP89H6327XTSA1 | BSP772TXUMA1 |
|---|---|---|---|---|---|
| Package | PG-SOT223-4 | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 600 V | 600 V | 240 V | 42 V |
| FET Type | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement | N-Channel Enhancement (logic-level) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | Industrial only | AEC-Q101 | AEC-Q101 |
| Reel Code / Packaging Suffix | H6433XTMA1 | H6327XTSA1 | L6433 | H6327XTSA1 | TXUMA1 |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Diferenciadores clave
- 600V BVDSS in a small SOT-223 package (frente a BSP89H6327XTSA1)
- Automotive-grade AEC-Q101 qualification (frente a BSP125L6433)
- Standard (non-logic-level) gate threshold (frente a BSP772TXUMA1)
Notas de diseño
Estimated: At PD=1.8W with TA=25C, the PG-SOT223-4 package RthJA is approximately 80-100 C/W on a 1 square-inch 2oz copper pour. Junction temperature rise is therefore roughly 144-180 C, which exceeds the 150 C TJ max unless the copper pour is enlarged or the actual dissipation is below 1W. Always derate PD by at least 50% for continuous operation, and route the tab land pattern as the primary thermal path with multiple thermal vias.
Use a 10-100 kohm pull-down resistor on the gate to GND to keep the MOSFET off during power-up or controller reset. Place the gate resistor physically close to the gate pin. A 10-100 ohm gate series resistor damps ringing from the gate-source capacitance and limits inrush into the gate. For switching inductive loads, add a flyback diode across the load (1N4148 for small loads, or a Schottky for larger currents).
Do not assume the SOT-223 tab is floating - it is internally bonded to the drain on the BSP125H6433XTMA1. Always provide a copper land under the tab even if you are not designing for thermal dissipation. Exceeding VGS(max) of +/- 20V destroys the gate oxide; ensure the gate drive stays below 15V for safety margin. Avalanche ratings (EAS) must be verified in the datasheet for unclamped inductive switching.
Información de cumplimiento
AEC-Q101 (note: AEC-Q100 vs Q101 - Q101 is the discrete semiconductor standard; AEC-Q100 is for ICs) per digchip datasheet note. Pb-free lead plating. RoHS compliant. Conflict-minerals status not explicitly stated - assume compliant per Infineon's published CMRT.
