BSS192PH6327FTSA1 vs BSL308PEH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS192PH6327FTSA1 por Infineon y BSL308PEH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS192PH6327FTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,34 | $0,21 |
| FET Type | P-Channel | 2x P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 250 V | — |
| Continuous Drain Current (Id) @ 25C | 190 mA (Ta) | — |
| Power Dissipation (Pd) | 1 W (Ta) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8 V, 10 V | — |
| Rds On (Max) @ Id, Vgs | [DATA_NEEDED: Rds On max @ Vgs] | — |
| Vgs(th) (Max) | [DATA_NEEDED: gate threshold voltage max] | — |
| Vgs(th) (Typ) | [DATA_NEEDED: gate threshold voltage typ] | — |
| Encapsulado | PG-SOT89 (SOT-89-3, 4-pin 3+Tab) | PG-TSOP6-6 (TSOT-23-6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max / operating temp] | — |
| Automotive Qualification | AEC-Q101 (per distributor listing) | AEC-Q101 |
| Series | SIPMOS Small-Signal-Transistor | OptiMOS |
| Part Status | Active | — |
| Estado RoHS | [DATA_NEEDED: explicit RoHS status from datasheet] | Compliant |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Configuration | — | Dual, common source |
| Temperatura de funcionamiento | — | -55 C to +150 C (TJ) |
| Número de pines | — | 6 |
| Channel Mode | — | Enhancement |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |