BSS316NH6327XTSA1 vs IRLML6346TRPBF Comparación
Comparación detallada lado a lado de BSS316NH6327XTSA1 por Infineon y IRLML6346TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSS316NH6327XTSA1 | IRLML6346TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,13 | $0,18 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS 2 (Trench) | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Rango de temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Encapsulado | PG-SOT23 (SOT-23-3) | Micro3 / SOT-23 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |