BSZ011NE2LS5IATMA1 vs BSZ018NE2LSIATMA1 Comparación
Comparación detallada lado a lado de BSZ011NE2LS5IATMA1 por Infineon y BSZ018NE2LSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ011NE2LS5IATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,39 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS (Infineon trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | -55 C to +150 C |
| Encapsulado | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Sin halógenos | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |