BSZ036NE2LSATMA1 vs BSZ018NE2LSATMA1 Comparación
Comparación detallada lado a lado de BSZ036NE2LSATMA1 por Infineon y BSZ018NE2LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ036NE2LSATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | OptiMOS 25V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Encapsulado | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55C to +150C |
| Nivel MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Sin halógenos | — | Yes |