BSZ0901NSIATMA1 vs BSC0921NDIATMA1 Comparación
Comparación detallada lado a lado de BSZ0901NSIATMA1 por Infineon y BSC0921NDIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ0901NSIATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,34 | $0,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | — |
| Series | OptiMOS 25V | — |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS 25V (N-channel) |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Power Dissipation (PD) at Ta=25C | 2.1 W | — |
| Power Dissipation (PD) at Tc=25C | 69 W | — |
| Encapsulado | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TISON-8 (8-pin, exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (typical MOSFET range) | — |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | — |
| Estado RoHS | Compliant | Compliant |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Pulsed Drain Current (IDM) | — | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Temperatura de funcionamiento | — | -55C to +150C (junction) |
| Nivel MSL | — | 1 (per Infineon OptiMOS family) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |