BSZ0901NSIATMA1 vs BSC0921NDIATMA1 비교

다음의 상세 나란히 비교: BSZ0901NSIATMA1 제조: Infineon 및 BSC0921NDIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSZ0901NSIATMA1 BSC0921NDIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.34 $0.68
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS 25V (N-channel)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
패키지 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TISON-8 (8-pin, exposed pad)
실장 유형 Surface Mount Surface Mount
핀 수 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
동작 온도 범위 -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 상태 Compliant Compliant
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Pulsed Drain Current (IDM) — 31 A (per channel, package-limited)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
동작 온도 — -55C to +150C (junction)
MSL 레벨 — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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