BSZ0901NSIATMA1 vs BSC0921NDIATMA1 对比

详细并排对比 BSZ0901NSIATMA1 出自 Infineon 和 BSC0921NDIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 ✓ 量产中

规格对比

参数 BSZ0901NSIATMA1 BSC0921NDIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $0.68
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS 25V (N-channel)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
封装 PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TISON-8 (8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
工作温度范围 -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
RoHS 状态 Compliant Compliant
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Pulsed Drain Current (IDM) — 31 A (per channel, package-limited)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
工作温度 — -55C to +150C (junction)
MSL 等级 — 1 (per Infineon OptiMOS family)
Primary Application — Synchronous buck converters, VRMs, POL regulators

数据手册与资源

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