BTS712204ESEXUMA1 vs BTS51202EKAXUMA1 Comparación
Comparación detallada lado a lado de BTS712204ESEXUMA1 por Infineon y BTS51202EKAXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BTS712204ESEXUMA1 - 4-Channel 5A Smart High-Side Switch | Infineon
BTS712204ESEXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BTS712204ESEXUMA1 | BTS51202EKAXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,34 | $1,68 |
| Number of Channels | 4 | 2 |
| Número de salidas | 4 | — |
| Configuración de salida | High-side | — |
| Nominal Continuous Current per Channel | 5 A | — |
| Typical On-State Resistance per Channel (Rdson) | 30 mOhm | — |
| Tensión de alimentación de funcionamiento | 5 V to 28 V (load-dump tolerant) | — |
| Maximum Load-Dump Voltage | 40 V (per datasheet) | — |
| Quiescent Current (Standby) | [DATA_NEEDED: standby Iq typical] | — |
| SPI / Diagnostic Interface Frequency | 5 MHz | — |
| Tipo de interfaz | Serial (SPI-compatible) + status pins | — |
| Diagnostic Functions | Current limit, over-temperature, open-load, short-to-battery/ground | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C (junction) | — |
| Encapsulado | PG-TSDSO-24 EP (exposed pad) | PG-DSO-14-40-EP (14-pin SOIC with exposed pad) |
| Package Dimensions | [DATA_NEEDED: PG-TSDSO-24 EP body size] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL 3 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q100 Grade 1 capable | — |
| Reverse-Battery Protection | Yes (integrated) | — |
| RoHS / Lead-Free | Yes / Yes (PG-TSDSO EP package) | — |
| Topología | — | Dual High-Side Switch (2 channels) |
| Technology | — | Smart6 (N-channel vertical MOSFET with charge pump) |
| On-State Resistance (RDS(on)) | — | 120 mΩ (typical per channel) |
| Continuous Output Current | — | 2 A per channel (typical 2.5 A) |
| Operating Voltage (Vbb) | — | 8 V to 18 V |
| Load Type | — | Lamps up to 1×10 W, LEDs, resistive/inductive loads |
| Temperatura de funcionamiento | — | -40 °C to +150 °C |
| Maximum Power Dissipation | — | 1800 mW |
| Integrated Protection | — | Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery |
| Diagnostic Output | — | Yes (status feedback pin) |
| Charge Pump | — | Integrated |
| Automotive Qualified | — | Yes |
| Estado RoHS | — | Compliant |