EP1C12F256C8 vs EP1C12F256C6 Comparación
Comparación detallada lado a lado de EP1C12F256C8 por Intel y EP1C12F256C6 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP1C12F256C8 | EP1C12F256C6 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $35,20 | $48,29 |
| Series | Cyclone | Cyclone I |
| Family | Cyclone I | — |
| Logic Elements (LE) | 12,060 | — |
| Total RAM Bits | 239,616 | — |
| Number of LABs/CLBs | 1,206 | — |
| Number of Logic Elements/Cells | 12,060 | — |
| Number of I/O | 185 | — |
| Number of PLLs | 2 | — |
| Total Memory Bits | 239,616 | — |
| Encapsulado / Carcasa | 256-BGA (FBGA) | — |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Temperatura de funcionamiento | 0°C to +85°C (commercial grade) | 0C to +85C (commercial, C6 speed grade) |
| Core Voltage | 1.5 V | — |
| I/O Voltage Range | 1.5 V to 3.3 V | — |
| Supplier Device Package | 256-FBGA (17x17 mm) | — |
| Process Technology | 130 nm SRAM | 130 nm SRAM, 1.5 V core |
| Configuration Method | Passive Serial / Active Serial / JTAG | — |
| Logic Elements | — | 12,060 |
| Logic Array Blocks (LABs) | — | 1,206 |
| Embedded RAM Bits | — | 239,616 bits (52 M4K blocks) |
| Embedded 18x18 Multipliers | — | 17 |
| Maximum User I/Os | — | 185 |
| PLLs | — | 2 |
| Encapsulado | — | 256-BGA (FineLine BGA, 17x17 mm, 1.0 mm pitch) |
| Speed Grade | — | C6 (mid-tier) |
| Configuration Modes | — | Active Serial (AS), Passive Serial (PS), JTAG |
| I/O Standards Supported | — | LVTTL, LVCMOS, LVDS, SSTL-2/3, PCI |
| LVDS Data Rate | — | Up to 640 Mbps |