EP2A40FB724C8 vs EP2A40B724C7 Comparación
Comparación detallada lado a lado de EP2A40FB724C8 por Intel y EP2A40B724C7 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2A40FB724C8 | EP2A40B724C7 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $205,00 | $650,00 |
| Family | APEX II | APEX II |
| Device Logic Elements | 38,400 | — |
| Typical Gates | 40,000 | — |
| Total RAM Bits | 655,360 | — |
| User I/O Pins | 540 | — |
| Core Voltage | 1.425 V to 1.575 V | — |
| Encapsulado | 724-BGA (FCBGA), 35 mm x 35 mm | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 | — |
| Temperatura de funcionamiento | Commercial (0 C to +85 C) per suffix | 0 °C to +85 °C (commercial) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount (BGA) |
| Architecture | MultiCore (LUT + Embedded System Blocks) | — |
| Embedded System Blocks | Configurable dual-port SRAM / CAM / FIFO | — |
| Configuration Mode | JTAG / Passive Serial / Passive Parallel | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| Process Technology | CMOS, SRAM-based | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Logic Elements / Cells | — | 38,400 |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |
| Nivel MSL | — | [DATA_NEEDED: MSL level] |