EP2A40FB724C8 vs EP2A40B724C7 비교
다음의 상세 나란히 비교: EP2A40FB724C8 제조: Intel 및 EP2A40B724C7 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP2A40FB724C8 | EP2A40B724C7 |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | Obsolete | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $205.00 | $650.00 |
| Family | APEX II | APEX II |
| Device Logic Elements | 38,400 | — |
| Typical Gates | 40,000 | — |
| Total RAM Bits | 655,360 | — |
| User I/O Pins | 540 | — |
| Core Voltage | 1.425 V to 1.575 V | — |
| 패키지 | 724-BGA (FCBGA), 35 mm x 35 mm | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 | — |
| 동작 온도 | Commercial (0 C to +85 C) per suffix | 0 °C to +85 °C (commercial) |
| 실장 유형 | Surface Mount (BGA) | Surface Mount (BGA) |
| Architecture | MultiCore (LUT + Embedded System Blocks) | — |
| Embedded System Blocks | Configurable dual-port SRAM / CAM / FIFO | — |
| Configuration Mode | JTAG / Passive Serial / Passive Parallel | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| Process Technology | CMOS, SRAM-based | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Logic Elements / Cells | — | 38,400 |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |