EP2A40FB724C8 vs EP2A40B724C7 对比
详细并排对比 EP2A40FB724C8 出自 Intel 和 EP2A40B724C7 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP2A40FB724C8 | EP2A40B724C7 |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $205.00 | $650.00 |
| Family | APEX II | APEX II |
| Device Logic Elements | 38,400 | — |
| Typical Gates | 40,000 | — |
| Total RAM Bits | 655,360 | — |
| User I/O Pins | 540 | — |
| Core Voltage | 1.425 V to 1.575 V | — |
| 封装 | 724-BGA (FCBGA), 35 mm x 35 mm | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 | — |
| 工作温度 | Commercial (0 C to +85 C) per suffix | 0 °C to +85 °C (commercial) |
| 安装类型 | Surface Mount (BGA) | Surface Mount (BGA) |
| Architecture | MultiCore (LUT + Embedded System Blocks) | — |
| Embedded System Blocks | Configurable dual-port SRAM / CAM / FIFO | — |
| Configuration Mode | JTAG / Passive Serial / Passive Parallel | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| Process Technology | CMOS, SRAM-based | 0.15 µm CMOS, up to 8 metal layers, all-layer copper |
| Logic Elements / Cells | — | 38,400 |
| Total System Gates | — | 1,500,000 |
| Embedded RAM Bits | — | 655,360 |
| Maximum User I/O | — | 540 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (typ. 1.5 V) |
| Maximum Internal Frequency | — | 562 MHz |
| PLLs | — | 4 |
| I/O Standards Supported | — | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | — | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | — | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | — | Yes (via ESB / I/O circuitry) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |