EP2S180F1020C5 vs EP2S180F1020C3 Comparación
Comparación detallada lado a lado de EP2S180F1020C5 por Intel y EP2S180F1020C3 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2S180F1020C5 | EP2S180F1020C3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3.357,86 | $1.280,00 |
| Series | Stratix II | Stratix II |
| Family | Stratix II | — |
| Logic Elements (LE) | 179,400 | — |
| Configurable Logic Blocks (CLBs) | 71,760 | — |
| Logic Array Blocks (LABs) | 8,970 | 8,970 |
| Total RAM Bits | 9,383,040 | — |
| User I/O Pins | 742 | — |
| Encapsulado | 1020-BBGA, FCBGA (33 x 33 mm, 1.0 mm pitch) | 1020-ball FBGA (flip-chip BGA) |
| Core Voltage | 1.15 V to 1.25 V | 1.2 V |
| Process Technology | 90 nm CMOS | — |
| Temperatura de funcionamiento | 0 C to +85 C (commercial) | Commercial (0C to +85C) |
| Speed Grade | C5 | C3 |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Estado RoHS | [DATA_NEEDED: rohs_status] | [DATA_NEEDED: RoHS status] |
| Configuration Mode | JTAG / Passive Serial / Passive Parallel / Active Serial | — |
| Number of Transceivers | [DATA_NEEDED: transceiver_count] | — |
| Device Family | — | EP2S180 |
| Equivalent Logic Elements (LEs) | — | 179,400 |
| Embedded Memory (RAM bits) | — | 9,383,040 |
| Maximum User I/Os | — | 742 |
| Process Node | — | 90 nm, all-layer copper SRAM |
| DSP Blocks | — | Dedicated high-speed multipliers |
| Memory Interfaces Supported | — | DDR2 SDRAM, QDRII SRAM, RLDRAM II |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL |
| Configuration Method | — | SRAM-based (volatile, requires boot device) |
| Development Toolchain | — | Quartus II / Quartus Prime |