EP3SE110F1152C3N vs EP3SE110F1152C4 Comparación
Comparación detallada lado a lado de EP3SE110F1152C3N por Intel y EP3SE110F1152C4 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
EP3SE110F1152C3N - Stratix III E FPGA, 107.5K LE, FC-FBGA-1152 | Intel
EP3SE110F1152C3N ⚠ Última compraIntel
EP3SE110F1152C4 - Stratix III E FPGA 107.5K LE 1152-FCBGA | Intel
EP3SE110F1152C4 ⚠ Última compraComparación de especificaciones
| Parámetro | EP3SE110F1152C3N | EP3SE110F1152C4 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Última compra | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.560,00 | $2.200,00 |
| Family | Stratix III E | Stratix III E |
| Series | Stratix III | — |
| Logic Elements (LE) | 107,500 | — |
| Logic Array Blocks (LABs) | 4,300 | [DATA_NEEDED: LAB count] |
| Total RAM Bits | 8,936,448 | — |
| User I/Os | 744 | — |
| Operating Frequency (max) | 500 MHz | — |
| Core Supply Voltage | 1.1 V nominal | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O supply range] | — |
| Process Technology | 65 nm TSMC | 65 nm |
| Package Type | FC-FBGA-1152 (flip-chip BGA) | 1152-ball FCBGA (Flip-Chip BGA) |
| Temperatura de funcionamiento | 0 °C to 85 °C (commercial) | — |
| Speed Grade | C3 | — |
| Tipo de montaje | Surface Mount | — |
| Estilo de montaje | SMD/SMT (Tray) | — |
| DSP Blocks | Yes (embedded multipliers) | [DATA_NEEDED: 18x18 multiplier count] |
| Tipo de memoria | M9K and M144K block RAM | — |
| External Memory Support | DDR/DDR2/DDR3 with read/write leveling | — |
| Boundary Scan | IEEE 1149.1 (JTAG) | — |
| RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per Altera/Intel datasheet family convention) | — |
| Logic Elements | — | 107,500 |
| Embedded Memory | — | 8,936,448 bits |
| Maximum User I/Os | — | 744 |
| Core Voltage | — | 1.1 V |
| Maximum Performance | — | 450 MHz |
| Operating Temperature Grade | — | Commercial (C4) |
| Configuration Memory | — | SRAM-based (volatile) |
| On-chip Termination | — | Dynamic, programmable |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Estado RoHS | — | Compliant |