EP3SE110F1152C3N vs EP3SE110F1152C4 Comparaison
Comparaison détaillée côte à côte de EP3SE110F1152C3N par Intel et EP3SE110F1152C4 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EP3SE110F1152C3N - Stratix III E FPGA, 107.5K LE, FC-FBGA-1152 | Intel
EP3SE110F1152C3N ⚠ Dernier achatIntel
EP3SE110F1152C4 - Stratix III E FPGA 107.5K LE 1152-FCBGA | Intel
EP3SE110F1152C4 ⚠ Dernier achatComparaison des spécifications
| Paramètre | EP3SE110F1152C3N | EP3SE110F1152C4 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Dernier achat | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1 560,00 | $2 200,00 |
| Family | Stratix III E | Stratix III E |
| Series | Stratix III | — |
| Logic Elements (LE) | 107,500 | — |
| Logic Array Blocks (LABs) | 4,300 | [DATA_NEEDED: LAB count] |
| Total RAM Bits | 8,936,448 | — |
| User I/Os | 744 | — |
| Operating Frequency (max) | 500 MHz | — |
| Core Supply Voltage | 1.1 V nominal | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O supply range] | — |
| Process Technology | 65 nm TSMC | 65 nm |
| Package Type | FC-FBGA-1152 (flip-chip BGA) | 1152-ball FCBGA (Flip-Chip BGA) |
| Température de fonctionnement | 0 °C to 85 °C (commercial) | — |
| Speed Grade | C3 | — |
| Type de montage | Surface Mount | — |
| Style de montage | SMD/SMT (Tray) | — |
| DSP Blocks | Yes (embedded multipliers) | [DATA_NEEDED: 18x18 multiplier count] |
| Type de mémoire | M9K and M144K block RAM | — |
| External Memory Support | DDR/DDR2/DDR3 with read/write leveling | — |
| Boundary Scan | IEEE 1149.1 (JTAG) | — |
| RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per Altera/Intel datasheet family convention) | — |
| Logic Elements | — | 107,500 |
| Embedded Memory | — | 8,936,448 bits |
| Maximum User I/Os | — | 744 |
| Core Voltage | — | 1.1 V |
| Maximum Performance | — | 450 MHz |
| Operating Temperature Grade | — | Commercial (C4) |
| Configuration Memory | — | SRAM-based (volatile) |
| On-chip Termination | — | Dynamic, programmable |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Statut RoHS | — | Compliant |