EP3SE110F1152I3N vs EP3SE110F1152I2N Comparación
Comparación detallada lado a lado de EP3SE110F1152I3N por Altera y EP3SE110F1152I2N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EP3SE110F1152I3N - Stratix III E FPGA, 107K LE, 1152-FCBGA | Altera
EP3SE110F1152I3N ⚠ Última compraComparación de especificaciones
| Parámetro | EP3SE110F1152I3N | EP3SE110F1152I2N |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Última compra | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3.980,00 | $1.480,00 |
| Series | Stratix III E | Stratix III Enhanced (EP3SE110) |
| Family | Stratix III E FPGA | Stratix III |
| Manufacturer | Altera (now Intel PSG) | — |
| Logic Elements (LE) | 107,500 | 107,500 |
| Total RAM Bits | 8,936,448 | — |
| Maximum User I/Os | 744 | — |
| Logic Array Blocks (LABs) | 4300 | — |
| Number of I/O Banks | Modular I/O banks (see Stratix III Device Handbook) | — |
| Core Voltage | 1.1 V | — |
| Process Technology | 65 nm CMOS | 40 nm low-power CMOS |
| Rango de temperatura de funcionamiento | -40C to +100C (industrial, I3 grade) | — |
| Speed Grade | -3 (I3 fast grade, industrial) | I2 |
| Encapsulado | 1152-ball FC-FBGA (Flip-Chip Fine-pitch BGA) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free (N suffix); RoHS compliance status: see Stratix III Device Handbook | Yes (suffix N) |
| Configuration | JTAG via Quartus II; supports AS, PS, JTAG, FPP modes | — |
| Internal Supply Voltage (Max) | 0.94 V (per Partstack listing) | — |
| Logic Array Blocks (LABs) / CLBs | — | 4,300 |
| System Gates | — | 8,936,448 |
| User I/O Pins | — | 744 |
| Number of Terminals | — | 1,152 |
| Package Code | — | BGA (FCBGA) |
| Package Shape | — | Square |
| Ball Pitch | — | 1.00 mm |
| Supply Voltage Range | — | 1.05 V to 1.15 V (nominal 1.1 V) |
| Maximum Internal Clock Frequency | — | 100 MHz (per distributor summary; device supports multi-Gbps transceivers) |
| Temperatura de funcionamiento | — | -40C to +100C (industrial) |