EP3SE110F1152I3N vs EP3SE110F1152I2N Comparaison
Comparaison détaillée côte à côte de EP3SE110F1152I3N par Altera et EP3SE110F1152I2N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Altera
EP3SE110F1152I3N - Stratix III E FPGA, 107K LE, 1152-FCBGA | Altera
EP3SE110F1152I3N ⚠ Dernier achatComparaison des spécifications
| Paramètre | EP3SE110F1152I3N | EP3SE110F1152I2N |
|---|---|---|
| Marque | Altera | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Dernier achat | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3 980,00 | $1 480,00 |
| Series | Stratix III E | Stratix III Enhanced (EP3SE110) |
| Family | Stratix III E FPGA | Stratix III |
| Manufacturer | Altera (now Intel PSG) | — |
| Logic Elements (LE) | 107,500 | 107,500 |
| Total RAM Bits | 8,936,448 | — |
| Maximum User I/Os | 744 | — |
| Logic Array Blocks (LABs) | 4300 | — |
| Number of I/O Banks | Modular I/O banks (see Stratix III Device Handbook) | — |
| Core Voltage | 1.1 V | — |
| Process Technology | 65 nm CMOS | 40 nm low-power CMOS |
| Plage de température de fonctionnement | -40C to +100C (industrial, I3 grade) | — |
| Speed Grade | -3 (I3 fast grade, industrial) | I2 |
| Boîtier | 1152-ball FC-FBGA (Flip-Chip Fine-pitch BGA) | — |
| Type de montage | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free (N suffix); RoHS compliance status: see Stratix III Device Handbook | Yes (suffix N) |
| Configuration | JTAG via Quartus II; supports AS, PS, JTAG, FPP modes | — |
| Internal Supply Voltage (Max) | 0.94 V (per Partstack listing) | — |
| Logic Array Blocks (LABs) / CLBs | — | 4,300 |
| System Gates | — | 8,936,448 |
| User I/O Pins | — | 744 |
| Number of Terminals | — | 1,152 |
| Package Code | — | BGA (FCBGA) |
| Package Shape | — | Square |
| Ball Pitch | — | 1.00 mm |
| Supply Voltage Range | — | 1.05 V to 1.15 V (nominal 1.1 V) |
| Maximum Internal Clock Frequency | — | 100 MHz (per distributor summary; device supports multi-Gbps transceivers) |
| Température de fonctionnement | — | -40C to +100C (industrial) |