EP3SE260F1517C2G vs EP3SE260F1517I3 Comparación
Comparación detallada lado a lado de EP3SE260F1517C2G por Intel y EP3SE260F1517I3 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE260F1517C2G | EP3SE260F1517I3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2.050,00 | $10.500,00 |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 254,400 | 255,000 |
| Adaptive Logic Modules (ALMs) | 81,760 | — |
| Total Memory Bits | 16,727,680 (16.67 Mbit) | — |
| Embedded Memory (M9K Blocks) | 864 | — |
| Embedded Multipliers (18x18) | 768 | — |
| User I/O Pins | 976 | — |
| Transceiver Channels | 12 | — |
| Transceiver Data Rate (max) | 3.75 Gbps (C2 grade) | — |
| PLLs (Fractional + Clock Multiplier) | 8 fractional + 4 CMU | — |
| Global Clock Networks | 20 | — |
| Encapsulado | 1517-ball FCBGA, 40x40 mm | 1517-BBGA, FCBGA |
| Speed Grade | C2 (commercial, ~6 ns) | — |
| Temperatura de funcionamiento | 0C to 85C (commercial, "C" suffix) | — |
| Process Node | 40 nm TSMC | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| Tipo de montaje | — | Surface Mount |
| Operating Temperature Grade | — | Industrial |
| Junction Temperature Range | — | -40C to +125C |
| Core Voltage | — | 1.0 V typical |
| Process Technology | — | 65 nm CMOS |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |