EP4CE6E22C6 vs EP4CE6E22C6N Comparación
Comparación detallada lado a lado de EP4CE6E22C6 por Intel y EP4CE6E22C6N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CE6E22C6 | EP4CE6E22C6N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $12,05 | $11,20 |
| Family | Cyclone IV E | Cyclone IV E |
| Device Logic Elements | 6,272 LE | — |
| Logic Array Blocks (LABs) | 392 LABs | [DATA_NEEDED: LAB count] |
| Total RAM Bits | 270 Kbit | — |
| Embedded 18x18 Multipliers | 15 | 15 |
| PLLs | 2 | 2 |
| Maximum User I/Os | 91 | 91 |
| Core Voltage | 1.2 V | — |
| Speed Grade | C6 | — |
| Temperatura de funcionamiento | 0 °C to +85 °C (Commercial) | -40 C to +85 C (industrial, C6 speed grade) |
| Package Type | 144-pin EQFP (Enhanced QFP, exposed pad) | — |
| Package Dimensions | 22 mm × 22 mm | — |
| Lead Pitch | 0.5 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | TSMC 60 nm low-k | 60 nm |
| Configuration Method | SRAM-based (volatile); JTAG, Active Serial, Passive Serial | — |
| Estado RoHS | Compliant | Lead-Free / Compliant |
| Device | — | EP4CE6 |
| Logic Elements (LEs) | — | 6,272 |
| Embedded Memory (M9K blocks) | — | [DATA_NEEDED: M9K block count] |
| Embedded Memory (Bits) | — | 270 Kbits |
| Global Clock Networks | — | 10 |
| I/O Banks | — | 4 |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Configuration Modes | — | JTAG, AS (Active Serial), PS (Passive Serial) |
| Encapsulado | — | 144-pin EQFP (Plastic Enhanced QFP, 22 x 22 mm, 0.5 mm pitch) |
| Lead-Free | — | Yes |