EP4CE75F29I8L vs EP4CE115F29C8N Comparación
Comparación detallada lado a lado de EP4CE75F29I8L por Intel y EP4CE115F29C8N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CE75F29I8L | EP4CE115F29C8N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $203,73 | $38,90 |
| Device Family | Cyclone IV E | — |
| Logic Elements (LE) | 75,408 | — |
| Configurable Logic Blocks (CLBs) | 4,713 | — |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded 18x18 Multipliers | 274 | 66 |
| Maximum User I/O | 426 | — |
| General-Purpose PLLs | 4 | 4 |
| Global Clock Networks | 15 | — |
| Core Voltage | 1.2 V | — |
| Internal Operating Frequency (max) | 362 MHz | — |
| Process Technology | 60 nm low power CMOS | — |
| Encapsulado | 780-ball FBGA (F29) 29x29 mm, 1.0 mm pitch | 780-ball FBGA (FineLine BGA) |
| Operating Temperature Grade | Industrial (-40C to +100C junction) | — |
| Speed Grade | 8 | C8 |
| Configuration Memory | SRAM-based, requires external configuration device | — |
| Estado RoHS | Compliant | Compliant |
| Family | — | Cyclone IV E |
| Logic Elements | — | 114,480 |
| Total Memory Bits | — | 3,981,312 (3888 Kb) |
| User I/O Pins | — | 528 |
| I/O Banks | — | 8 |
| Process Node | — | 60 nm |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V |
| Temperatura de funcionamiento | — | 0 °C to 85 °C (Commercial) |
| Tipo de montaje | — | Surface Mount |
| Configuration Method | — | JTAG, Passive/Active Serial, Fast Passive/Active Parallel |
| Radiation Hardened | — | No |
| Tray Quantity | — | 36 units |