EPF10K100EFC484-3 vs EPF10K100EFC484-3N Comparación
Comparación detallada lado a lado de EPF10K100EFC484-3 por Altera y EPF10K100EFC484-3N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EPF10K100EFC484-3 | EPF10K100EFC484-3N |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,00 | $142,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Typical Gates | 100,000 | — |
| Maximum System Gates | 158,000 | — |
| Logic Elements | 4,992 | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| Embedded Memory (EAB RAM) | 49,152 bits | — |
| User I/O Pins | 338 | — |
| Speed Grade | -3 (fastest commercial) | -3 (fastest commercial bin) |
| Encapsulado | 484-ball FineLine BGA | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Temperatura de funcionamiento | 0C to +70C (Commercial) | — |
| Core Voltage | 2.5 V | — |
| I/O Standards Supported | 2.5V / 3.3V / 5.0V (PCI-compliant) | — |
| JTAG Support | IEEE Std. 1149.1-1990 BST | — |
| Configuration Method | SRAM (volatile, requires configuration device) | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Logic Elements / Cells | — | 4992 |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| User I/Os | — | 338 |
| Process Technology | — | 0.22 µm CMOS |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |
| Tipo de montaje | — | Surface Mount (BGA) |