EPF10K100EFC484-3 vs EPF10K100EFC484-3N 对比
详细并排对比 EPF10K100EFC484-3 出自 Altera 和 EPF10K100EFC484-3N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EPF10K100EFC484-3 | EPF10K100EFC484-3N |
|---|---|---|
| 品牌 | Altera | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $65.00 | $142.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Typical Gates | 100,000 | — |
| Maximum System Gates | 158,000 | — |
| Logic Elements | 4,992 | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| Embedded Memory (EAB RAM) | 49,152 bits | — |
| User I/O Pins | 338 | — |
| Speed Grade | -3 (fastest commercial) | -3 (fastest commercial bin) |
| 封装 | 484-ball FineLine BGA | 484-ball FineLine BGA (FC484 / FBGA-484) |
| 工作温度 | 0C to +70C (Commercial) | — |
| Core Voltage | 2.5 V | — |
| I/O Standards Supported | 2.5V / 3.3V / 5.0V (PCI-compliant) | — |
| JTAG Support | IEEE Std. 1149.1-1990 BST | — |
| Configuration Method | SRAM (volatile, requires configuration device) | SRAM (external EPROM/Flash/JTAG required at power-up) |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Logic Elements / Cells | — | 4992 |
| Total Gates | — | 100,000 |
| Embedded Memory (EAB) | — | 49,152 bits (12 EABs) |
| User I/Os | — | 338 |
| Process Technology | — | 0.22 µm CMOS |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | — | 200 MHz |
| Temperature Grade | — | Commercial (0 °C to +70 °C) |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free) |
| 安装类型 | — | Surface Mount (BGA) |