EPF10K200EBI600-2N vs EPF10K200EBC600-3 Comparación
Comparación detallada lado a lado de EPF10K200EBI600-2N por Intel y EPF10K200EBC600-3 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
EPF10K200EBC600-3 - 200K Gate FLEX 10KE FPGA, 600-BGA | Intel / Altera
EPF10K200EBC600-3 ObsoleteComparación de especificaciones
| Parámetro | EPF10K200EBI600-2N | EPF10K200EBC600-3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $140,00 | $575,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Typical Gates | 200,000 | — |
| Maximum System Gates | 513,000 | — |
| Logic Elements (LEs) | 9,984 | — |
| Embedded Array Blocks (EABs) | 12 | — |
| Total RAM Bits | 98,304 | — |
| User I/O Pins | 470 | — |
| Dedicated Inputs | 6 | — |
| Encapsulado | 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) | 600-ball FineLine BGA, 45 x 45 mm |
| Technology / Process | 0.22 µm CMOS SRAM | — |
| Core Supply Voltage | 2.5 V (2.3 V to 2.7 V) | — |
| I/O Supply Voltage | 2.5 V / 3.3 V (5 V tolerant I/O available) | — |
| Propagation Delay | 0.4 ns to 0.6 ns (per LE) | — |
| Maximum Internal Frequency | 200 MHz | — |
| Temperatura de funcionamiento | 0 °C to +70 °C (commercial) | 0C to +70C (commercial) |
| Configuration Method | SRAM, JTAG (IEEE 1149.1), serial configuration EPROM | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS compliance status] |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Series | — | FLEX-10KE |
| System Gates | — | 200,000 |
| Logic Elements / Cells | — | 9,984 |
| Logic Array Blocks (LABs) | — | 1248 |
| Embedded Memory (EABs) | — | 24,576 bits |
| Maximum User I/O | — | 470 |
| Number of PLLs | — | 4 |
| Core Voltage | — | 2.5 V (2.375 V to 2.625 V) |
| Process Technology | — | 0.22 micrometer SRAM |
| Speed Grade | — | -3 (commercial) |
| JTAG Support | — | Yes (IEEE 1149.1 boundary-scan) |