EPF10K250EGC599-1 vs EPF10K250EGC599-3 Comparación
Comparación detallada lado a lado de EPF10K250EGC599-1 por Intel y EPF10K250EGC599-3 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EPF10K250EGC599-3 - 250K Gate FLEX 10KE FPGA, 599-PGA | Intel
EPF10K250EGC599-3 ⚠ Última compraComparación de especificaciones
| Parámetro | EPF10K250EGC599-1 | EPF10K250EGC599-3 |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $162,00 | $135,00 |
| Product Type | FPGA (Field-Programmable Gate Array) | — |
| Series | FLEX 10K | — |
| Logic Elements | 40,960 | 12,160 |
| Equivalent Gates | 250,000 | — |
| Flip-Flops | 12,160 | — |
| User I/O Pins | 470 | — |
| Embedded Array Blocks (EAB) | 20 (2 Kbit each) | — |
| Encapsulado | 599-BPGA / HIPGA-599 (Ceramic Pin Grid Array) | 599-pin PGA (HIPGA / Heat-dissipating PGA) |
| Recuento de pines | 599 | — |
| Temperatura de funcionamiento | 0C to +70C (Commercial) | — |
| Tipo de montaje | Through-Hole (PGA) | Through-hole PGA |
| Configuration | SRAM (volatile), serial/parallel EPROM | — |
| Process Node | 0.42 µm CMOS | — |
| I/O Standard Support | 5.0 V PCI, LVTTL, LVCMOS | — |
| Programming Interface | JTAG (IEEE 1149.1), passive serial | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Estado RoHS | unknown (ceramic HIPGA package historically non-RoHS) | [DATA_NEEDED: RoHS compliance status] |
| Family | — | FLEX 10KE |
| Typical Gates | — | 250,000 |
| Embedded Memory (Bits) | — | 409,600 |
| Embedded Array Blocks (EABs) | — | 12 |
| Maximum User I/O | — | 470 |
| Package Pin Count | — | 599 |
| Speed Grade | — | -3 |
| Operating Temperature Grade | — | Commercial (0C to +70C) |
| Core Voltage | — | 3.3 V |
| I/O Voltage Support | — | 3.3 V / 2.5 V / 1.8 V (MultiVolt) |
| Process Technology | — | 0.22 micron CMOS, SRAM-based configuration |
| Configuration Method | — | Serial or parallel, SRAM configuration cell |
| Terminal Form | — | PIN/PEG |