EPF10K250EGC599-1 vs EPF10K250EGC599-3 Comparaison
Comparaison détaillée côte à côte de EPF10K250EGC599-1 par Intel et EPF10K250EGC599-3 par Altera. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Altera
EPF10K250EGC599-3 - 250K Gate FLEX 10KE FPGA, 599-PGA | Intel
EPF10K250EGC599-3 ⚠ Dernier achatComparaison des spécifications
| Paramètre | EPF10K250EGC599-1 | EPF10K250EGC599-3 |
|---|---|---|
| Marque | Intel | Altera |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $162,00 | $135,00 |
| Product Type | FPGA (Field-Programmable Gate Array) | — |
| Series | FLEX 10K | — |
| Logic Elements | 40,960 | 12,160 |
| Equivalent Gates | 250,000 | — |
| Flip-Flops | 12,160 | — |
| User I/O Pins | 470 | — |
| Embedded Array Blocks (EAB) | 20 (2 Kbit each) | — |
| Boîtier | 599-BPGA / HIPGA-599 (Ceramic Pin Grid Array) | 599-pin PGA (HIPGA / Heat-dissipating PGA) |
| Nombre de broches | 599 | — |
| Température de fonctionnement | 0C to +70C (Commercial) | — |
| Type de montage | Through-Hole (PGA) | Through-hole PGA |
| Configuration | SRAM (volatile), serial/parallel EPROM | — |
| Process Node | 0.42 µm CMOS | — |
| I/O Standard Support | 5.0 V PCI, LVTTL, LVCMOS | — |
| Programming Interface | JTAG (IEEE 1149.1), passive serial | — |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Statut RoHS | unknown (ceramic HIPGA package historically non-RoHS) | [DATA_NEEDED: RoHS compliance status] |
| Family | — | FLEX 10KE |
| Typical Gates | — | 250,000 |
| Embedded Memory (Bits) | — | 409,600 |
| Embedded Array Blocks (EABs) | — | 12 |
| Maximum User I/O | — | 470 |
| Package Pin Count | — | 599 |
| Speed Grade | — | -3 |
| Operating Temperature Grade | — | Commercial (0C to +70C) |
| Core Voltage | — | 3.3 V |
| I/O Voltage Support | — | 3.3 V / 2.5 V / 1.8 V (MultiVolt) |
| Process Technology | — | 0.22 micron CMOS, SRAM-based configuration |
| Configuration Method | — | Serial or parallel, SRAM configuration cell |
| Terminal Form | — | PIN/PEG |