H5AN8G8NAFR-VKC vs H5AN8G8NAFR-UHCR Comparación
Comparación detallada lado a lado de H5AN8G8NAFR-VKC por SK hynix y H5AN8G8NAFR-UHCR por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN8G8NAFR-VKC | H5AN8G8NAFR-UHCR |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,15 | $2,20 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organización de memoria | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interfaz | SSTL12 | CMOS, synchronous DDR4 |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Encapsulado | 78-ball FBGA | FBGA-78 (PBGA78) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Velocidad de datos | — | 2400 Mbps/pin (PC2400) |
| Packing Suffix | — | R = Tape & Reel |
| Speed Grade Code | — | -UH |
| Generation Family | — | H5AN8GxNAFR-xxC (DDR4) |
| Application Class | — | Main memory / high bandwidth |
| Latencia CAS | — | [DATA_NEEDED: CAS latency (CL)] |
| Refresh Rate | — | [DATA_NEEDED: refresh specification] |
| Nivel MSL | — | [DATA_NEEDED: moisture sensitivity level] |