H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix
N.º de pieza: H5AN8G8NAFR-VKC ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $6.2 | $6,20 |
| 10 | $5.65 | $56,50 |
| 100 | $5.1 | $510,00 |
| 500 | $4.6 | $2.300,00 |
| 1.000 | $4.15 | $4.150,00 |
H5AN8G8NAFR-VKC Descripción general
A DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock (double data rate). Within the memory hierarchy, DDR4 SDRAM sits under the SDRAM family, which in turn belongs to the broader DRAM and volatile semiconductor memory categories. DDR4 devices are the dominant main-memory technology for servers, workstations, desktop PCs, and embedded computing modules, offering higher density, lower operating voltage, and better bandwidth than the previous DDR3 generation.
Key features of the H5AN8G8NAFR family include 8Gb density in a single die, an x8 (1G x 8) organization suited to ECC-based and register-less designs, a DDR4-2666 data rate (CL19 class timing for the -VKC bin), and a nominal 1.2V core supply that reduces power consumption versus DDR3. Bank-group architecture and burst lengths of 8 enable high sustained bandwidth for memory-intensive workloads.
Technically, the device uses SK hynix CMOS process technology with internal banks organized for parallel access. The VKC speed bin is qualified for DDR4-2666 operation with standard JEDEC-defined DDR4 command timing, on-die termination (ODT), and DLL for output skew control. The x8 organization simplifies DIMM and onboard solder-down designs where single-bit error correction (SECDED) is implemented at the controller level.
Typical applications include main memory for industrial controllers, computing modules, networking equipment, storage systems, embedded logging platforms, and firmware/data logging where large density and high bandwidth are required, as stated in the manufacturer datasheet description.
Design consideration: DDR4 signal integrity demands length-matched routing, careful ODT calibration, and controller-level training (write leveling, read training); verify the memory controller supports the -VKC (2666) speed bin and 1.2V supply rail before layout.
This page synthesizes distributor sourcing data, drop-in alternatives from the SK hynix DDR4 family and cross-brand equivalents, plus practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para H5AN8G8NAFR-VKC — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5AN8G8NAFR-VKC (mismo factor de forma y huella) — difiere en Interface, Package, Data Rate, RoHS Status, Organization.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5AN8G8NAFR-UHI
✅ Sustitución directa✓ En stock
$4.1 / unidad
Ver hoja de datos →H5AN8G8NAFR-UHC
✅ Sustitución directa✓ En stock
Consulte el precio
Ver hoja de datos →H5AN8G8NAFR-RDC
✅ Sustitución directa✓ En stock
$2.95 / unidad
Ver hoja de datos →H5AN8G8NAFR-PBC
✅ Sustitución directa✓ En stock
$2.2 / unidad
Ver hoja de datos →H5AN8G8NMFR-TFC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4A8G085WC-BCWE
✅ Sustitución directa✓ En stock
$7.3828 / unidad
Ver hoja de datos →H5AN8G8NAFR-VKC Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Density | 8 Gb |
| Organización de memoria | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) |
| Supply Voltage (VDD) | 1.2 V |
| Interfaz | SSTL12 |
| Burst Length | 8 (BL8) |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | Yes |
| DLL | Yes (DLL for output skew control) |
| Encapsulado | 78-ball FBGA |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free) |
| Process Technology | CMOS |
| Recommended Application | Main memory requiring large density and high bandwidth |
Guía de configuración de pines de H5AN8G8NAFR-VKC 78-ball fbga
Configuración de pines para H5AN8G8NAFR-VKC (encapsulado 78-ball fbga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para H5AN8G8NAFR-VKC.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
H5AN8G8NAFR-VKC es adecuado para 6 aplicacións: Industrial Controller Main Memory, Embedded Computing Modules (COM/SOM), Networking and Communication Equipment, Data Storage and SSD Controller Buffering, Data Logging and Embedded Recording Systems, Desktop and Workstation Memory Modules.
Industrial Controller Main Memory
The H5AN8G8NAFR-VKC provides 8Gb of DDR4-2666 bandwidth in a compact 78-ball FBGA, making it well suited as the main system memory of industrial PLCs, motion controllers, and factory-automation gateways. Its 1G x 8 organization supports controller-level SECDED error correction, improving uptime in electrically noisy factory environments. Sourcing listings explicitly cite industrial controllers as a target use for this part. In a solder-down design, the DRAM connects to the SoC memory controller with fly-by address/command routing and SSTL12 signaling; the DDR4-2666 rate delivers roughly 2.1 GB/s per x8 device, sufficient for control-loop data buffering, HMI frame buffers, and logging workloads. Power consumption at 1.2V is significantly lower than DDR3 equivalents, reducing thermal load in sealed enclosures. Validate industrial-temperature requirements and run controller memory training at the target speed bin during qualification.
Recomendado
Embedded Computing Modules (COM/SOM)
Computer-on-module and system-on-module designers use the H5AN8G8NAFR-VKC as solder-down main memory because the 78-ball FBGA footprint saves board area versus SODIMM sockets and improves vibration reliability in mobile and transportation platforms. One or more 8Gb devices provide 1-2 GB of DDR4 memory at up to 2666 MT/s, matching the memory-controller capability of common ARM and x86 SoCs used in edge computing. The x8 organization with controller ECC protects against single-bit errors in long-lifetime deployments. During design, DQ/DQS groups must be length-matched within tight skew windows and ODT calibrated during boot-time memory training. Compared with POP-stacked memory, discrete FBGA DRAM simplifies supply-chain management and allows density changes (4Gb/8Gb variants from the same H5AN8G8NBJR/H5AN8G8NAFR families) without PCB respin when the land pattern is shared across the family.
Recomendado
Networking and Communication Equipment
Routers, switches, and network-attached storage platforms require large, fast packet-buffer memory. The H5AN8G8NAFR-VKC's 8Gb density and DDR4-2666 data rate provide roughly 2.1 GB/s per device of sustained bandwidth, ideal for bursty packet traffic and queue buffering in enterprise networking hardware. Multiple x8 devices are ganged on a 64-bit or 72-bit (ECC) data bus, where the 1G x 8 organization maps directly onto controller-level SECDED schemes. The 1.2V VDD rail keeps overall board power within typical switch-system thermal budgets even at high packet rates. The part's DLL and on-die termination support signal integrity on multi-drop fly-by topologies typical of networking main-memory buses. For higher-bandwidth forwarding planes, pair with application-specific packet processors that support DDR4-2666 x8 components; verify timing-bin compatibility and retrain the controller after any vendor or bin substitution.
Recomendado
Data Storage and SSD Controller Buffering
Enterprise SSDs, RAID controllers, and storage appliances use DDR4 DRAM as metadata cache and FTL (flash translation layer) working memory. The H5AN8G8NAFR-VKC's 8Gb capacity holds mapping tables for multi-terabyte NAND arrays, while DDR4-2666 bandwidth minimizes metadata lookup latency under heavy random-I/O workloads. The x8 organization with ECC protection is preferred in storage controllers because an uncorrected DRAM bit error can corrupt logical-to-physical mapping and cause data loss. Operating at 1.2V keeps controller-board power within the SSD power-envelope constraints, which is critical for U.2/M.2 form factors. Storage designers typically populate one to four of these FBGA components around the SSD controller; bus routing follows DDR4 fly-by topology with per-device decoupling. Confirm the storage controller supports the 2666 bin or downgrade to a lower speed variant of the same family for cost savings.
Recomendado
Data Logging and Embedded Recording Systems
Embedded data recorders - including vehicle data loggers, test instrumentation buffers, and industrial event recorders - require dense, high-bandwidth volatile memory to absorb high-rate sensor streams before writing to non-volatile storage. The H5AN8G8NAFR-VKC offers 8Gb per device at DDR4-2666, providing the buffering bandwidth to capture multi-channel ADC streams in real time. Product listings explicitly cite embedded logging as an intended use. Because recorders often face vibration and thermal cycling, solder-down FBGA mounting eliminates socket contact failures. The 1.2V supply suits battery-backed and low-power logging platforms; self-refresh modes allow retention through power transitions into standby. System designers should implement controller ECC using the x8 organization and validate memory training across the full environmental range. When bandwidth is not critical, lower-bin family variants (RDC, PBC) reduce cost with the identical PCB footprint.
Recomendado
Desktop and Workstation Memory Modules
UDIMM and RDIMM manufacturers use DDR4 x8 components such as the H5AN8G8NAFR-VKC to build 8 GB modules from sixteen 4-bit-mapped devices or ECC modules in 72-bit configurations. The DDR4-2666 VKC bin matches mainstream desktop and workstation memory-controller speeds, delivering standard throughput for office, CAD, and light virtualization workloads. The 1G x 8 organization is specifically required for ECC-capable modules since SECDED correction operates on x8 devices. Standard 78-ball FBGA land patterns allow module makers to second-source across the SK hynix H5AN8G8NAFR family and cross-brand equivalents without changing module PCB layout. Module-level design follows JEDEC DDR4 module reference designs, including fly-by address/command routing and registered clocking for RDIMMs. Commodity DRAM bin pricing varies with the market cycle, so qualification across multiple speed bins of the same family improves procurement flexibility.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5AN8G8NAFR-VKC — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5AN8G8NAFR-UHI | H5AN8G8NAFR-UHC | H5AN8G8NMFR-TFC | K4A8G085WC-BCWE |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS / Halogen-Free | Compliant / Yes | Compliant (same family datasheet) | Compliant (same family datasheet) | Compliant (same family datasheet) | Compliant |
| Pin-to-Pin Compatibility | Reference | Yes - same family footprint | Yes - same family footprint | Yes - DDR4 x8 FBGA footprint | Yes - DDR4 x8 FBGA footprint (retraining required) |
Diferenciadores clave
- DDR4-2666 speed bin for mainstream bandwidth (frente a H5AN8G8NAFR-RDC)
- Updated NFR die within the same footprint (frente a H5AN8G8NMFR-TFC)
- RoHS, lead-free and halogen-free compliance (frente a K4A8G085WC-BCWE)
Notas de diseño
DDR4 SSTL12 signaling at 2666 MT/s demands strict routing discipline: length-match each DQ/DM/DQS byte-lane group within the controller's specified skew window (typically a few mils intra-group), and route address/command/control as fly-by topology with termination to VTT (0.6V). Maintain reference-plane continuity under all DDR4 nets and use the SK hynix DDR4 design guide plus your SoC vendor's layout checklist. Skipping per-ball decoupling on the 78-ball FBGA is a common cause of eye failures at speed.
Provide a regulated 1.2V VDD rail sized for worst-case DDR4 access currents, with bulk capacitance plus dense 0.1uF/0.01uF ceramic decoupling at every power/ground ball pair. Generate VTT (0.6V) with a dedicated termination regulator rated for transient currents on the address/command bus, and sequence VDD/VDDQ per the DDR4 specification before applying the reset. Estimated: a single 8Gb device at DDR4-2666 draws on the order of a few hundred mW active, so multi-device buses require meaningful rail current planning.
Speed-bin mismatches are the most frequent DRAM substitution error: the -VKC is a DDR4-2666 grade, while -RDC, -PBC, and -TFC parts are lower bins and must not be placed in a system expecting 2666 timing. After any component or vendor change (including cross-brand FBGA-compatible parts), rerun full controller memory training (write leveling, read gating, ODT optimization) and validate at temperature extremes. SK hynix reserves the right to change specifications without notice - always confirm the current datasheet revision before release.
Información de cumplimiento
Datasheet description states: '8Gb DDR4 SDRAM Lead-Free & Halogen-Free (RoHS Compliant)'. REACH and conflict-minerals status not stated in provided data.