H5ANAG8NBJR-PBC vs H5AN8G8NCJR-PBC Comparación
Comparación detallada lado a lado de H5ANAG8NBJR-PBC por SK hynix y H5AN8G8NCJR-PBC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NBJR-PBC | H5AN8G8NCJR-PBC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $31,50 | $2,40 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | — |
| Organización de memoria | x8 | 1G x 8 (x8) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class | — |
| Encapsulado | FBGA-78 (7.5 mm x 11 mm) | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Prefetch | 8n | — |
| Tipo de interfaz | Parallel, SSTL12 | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical bin) | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self refresh, 1x/2x/4x refresh modes | Auto-refresh and self-refresh |
| Die Revision | BJR | — |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) | Lead-Free & Halogen-Free |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standard Package Quantity | [DATA_NEEDED: standard quantity] | — |
| Tamaño de memoria | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Velocidad de datos | — | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Burst Length | — | BL8 |
| Características | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |