H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix
N.º de pieza: H5ANAG8NBJR-RDC ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.95 | $4,95 |
| 10 | $4.55 | $45,50 |
| 100 | $4.15 | $415,00 |
| 500 | $3.85 | $1.925,00 |
| 1.000 | $3.55 | $3.550,00 |
H5ANAG8NBJR-RDC Descripción general
DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (double data rate), sitting within the hierarchy: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM -> memory IC -> semiconductor. DDR4 succeeded DDR3 with lower operating voltage (1.2V vs 1.5V), higher densities, bank groups, and improved signaling via DQS training and DBI (data bus inversion).
Key features include fully synchronous operation referenced to both clock edges, an 8-bit-wide x8 organization with 2G addressable locations, and support for standard DDR4 features such as bank groups, CAS latency programming, and on-die termination (ODT). The -RDC speed grade ordering supports DDR4-2666-class data rates at the 1.2V VDD supply.
Architecturally, the device uses a CMOS core with charge-storage DRAM cells that require periodic refresh, a hierarchical bank structure for concurrency, and a SSTL12 interface for high-speed signaling. Internal pipelining sustains full bandwidth at the rated clock while read/write CRC and CA parity options (per family datasheet) strengthen data integrity in server-class systems.
Typical applications include server main memory DIMMs (RDIMM/LRDIMM/UDIMM), embedded computing modules, networking and storage controllers, and industrial or test systems requiring high-density memory. The x8 organization suits ECC-based designs where one bit-wide device per lane simplifies error correction.
Design consideration: DDR4 routing requires length-matched address/command and data groups, reference voltages (VDDQ/2), and adherence to the JEDEC DDR4 signal integrity budget; fly-by routing of CA signals is standard on DIMM designs.
This page synthesizes verified distributor data, drop-in SK hynix alternatives, and practical DDR4 design notes not found in a single manufacturer datasheet, providing engineers with a complete selection reference.
Alternativas directas para H5ANAG8NBJR-RDC — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con H5ANAG8NBJR-RDC (mismo factor de forma y huella) — difiere en Interface, RoHS Status, Package, Density, Organization.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
H5ANAG8NBJR-PBC
✅ Sustitución directa✓ En stock
$31.5 / unidad
Ver hoja de datos →H5ANAG8NCJR-XXC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
H5AN8G8NCJR-XNC
✅ Sustitución directa✓ En stock
$30.6923 / unidad
Ver hoja de datos →H5AN8G8NCJR-RDC
✅ Sustitución directa✓ En stock
$2.7 / unidad
Ver hoja de datos →H5AN8G8NCMR-RDC
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
H5AN8G6NCJR-RDC
✅ Sustitución directa✓ En stock
$19.6875 / unidad
Ver hoja de datos →H5ANAG8NBJR-RDC Especificaciones
| Tipo de memoria | DDR4 SDRAM |
| Density | 16 Gbit |
| Organización de memoria | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Interfaz | SSTL12 |
| Speed Grade (suffix R) | DDR4-2666 class |
| Encapsulado | 78-ball FBGA |
| Tipo de montaje | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | DQS with read/write training |
| Data Bus Inversion | Supported (DBI) |
| Estado RoHS | Compliant (lead-free PBGA per family product data) |
| Estado del ciclo de vida | Active |
Guía de configuración de pines de H5ANAG8NBJR-RDC 78-ball fbga
Configuración de pines para H5ANAG8NBJR-RDC (encapsulado 78-ball fbga). La numeración de pines, las funciones y los diagramas de conexión se definen en la hoja de datos del fabricante. Consúltela para conocer el footprint exacto y las directrices de soldadura.
No hay datos detallados de patillaje disponibles para H5ANAG8NBJR-RDC.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
H5ANAG8NBJR-RDC es adecuado para 6 aplicacións: Server Main Memory (RDIMM/LRDIMM), Embedded Computing Modules, Networking and Storage Controllers, Workstations and Desktop Platforms, Test and Measurement Instrumentation, Industrial Automation and Motion Control.
Server Main Memory (RDIMM/LRDIMM)
The H5ANAG8NBJR-RDC is a primary building block for DDR4 server DIMMs, where its 16Gb density in a 2G x 8 organization enables 32GB, 64GB, and higher-capacity modules with fewer DRAM components per module. The x8 width aligns with ECC schemes on registered DIMMs, allowing per-lane error correction without wasting bandwidth. With 1.2V SSTL12 signaling and DDR4-2666-class ordering, the device meets the bandwidth and power targets of data center platforms, where each watt saved across thousands of DIMMs compounds into significant total-cost-of-ownership reduction. Design-in requires fly-by command/address routing, per-pin DQS training support, and SPD programming matching the -RDC speed bin; the benefit is halved component count versus 8Gb parts for equal capacity, reducing assembly cost and potential failure points per module.
Recomendado
Embedded Computing Modules
Embedded computing modules (COM Express, SMARC, custom SODIMM-style carrier boards) use the H5ANAG8NBJR-RDC to achieve 4GB+ total memory from a handful of 16Gb components, preserving board area for processors, power stages, and I/O. The 78-ball FBGA x8 footprint keeps data-bus routing compact, and the 1.2V rail integrates cleanly with the low-voltage power tree derived from a 5V or 12V input via a synchronous buck converter plus DDR termination regulator. Industrial hosts running Linux or RTOS images benefit from the bandwidth headroom of DDR4-2666-class ordering while the family datasheet's industrial temperature support (per grade) covers -40C to +85C class environments. The trade-off versus LPDDR4 is higher idle power in exchange for ECC capability and standard JEDEC interoperability across controller vendors.
Recomendado
Networking and Storage Controllers
Enterprise networking switches, routers, and storage RAID controllers use the H5ANAG8NBJR-RDC as deep packet-buffer and cache memory, where 16Gb per component lets designers reach tens of gigabytes of buffering in a compact footprint. High sustained throughput matters here: the DDR4-2666-class ordering provides roughly 21 GB/s peak per 64-bit channel, and the x8 organization supports interleaved multi-device channels with per-device ECC. Packet-buffer workloads stress random-access patterns, so controller-side bank-group interleaving and DBI reduce bus turnaround penalties. According to the SK hynix family datasheet, fully synchronous operation on both clock edges with programmable CAS latency enables deterministic latency budgeting, which is essential for line-rate forwarding and journaling file systems where worst-case access time, not just average bandwidth, must be characterized.
Recomendado
Workstations and Desktop Platforms
High-memory workstations and desktop platforms integrate the H5ANAG8NBJR-RDC in UDIMM or on-board soldered configurations, where 16Gb components enable 32GB per channel using only four devices - important for mini-PC and AIO designs with restricted area. The 1.2V VDD/VDDQ rail reduces memory subsystem power versus DDR3's 1.5V by 20-30% under comparable load, directly lowering thermal load in passive-cooled chassis. On-die termination and CA parity options simplify signal integrity closure on four-layer desktop boards. Designers should program the SPD to advertise the -RDC speed bin and validate JEDEC training on the target CPU memory controller; the measurable benefit is maximum capacity per channel without exceeding the PCB layer count that a higher component count would demand.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators require deep capture memory to sustain long records at high sample rates, and the H5ANAG8NBJR-RDC provides 16Gb per device with the bandwidth to stream acquisition data at DDR4-2666 class speeds. The x8 organization pairs with FPGA memory controllers that implement per-device write CRC, protecting long-duration captures against soft errors - critical when a 24-hour thermal soak recording cannot be repeated. Synchronous operation on both clock edges with defined CAS latency lets instrument firmware budget read latency precisely for trigger pipelines. Compared with Graphics DDR (GDDR) alternatives, standard DDR4 offers lower controller complexity and JEDEC-standard interoperability at the cost of lower per-pin data rate, which is acceptable because instruments scale via channel width rather than per-pin speed.
Recomendado
Industrial Automation and Motion Control
Industrial PCs, robot controllers, and machine-vision systems use the H5ANAG8NBJR-RDC for frame buffers and process-data memory, benefiting from 16Gb density in the vibration-tolerant 78-ball FBGA surface-mount package - no socket fingers to oxidize in humid factory environments. The family's wide-temperature grade options support -40C to +95C class operation per the SK hynix datasheet temperature listings, covering uncooled control cabinets. Memory content includes vision frame buffers where the DDR4-2666-class bandwidth sustains multi-camera GigE Vision streams, and deterministic control loops where ECC from the x8 organization prevents single-bit upsets from corrupting servo trajectories. Designers should budget refresh overhead at elevated temperature (2x refresh rate above 85C class per JEDEC DDR4 convention) when calculating worst-case bus utilization.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para H5ANAG8NBJR-RDC — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | H5ANAG8NBJR-PBC | H5ANAG8NCJR-XXC | H5AN8G8NCJR-XNC | H5AN8G8NCMR-RDC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 8 Gbit | 8 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 1G x 8 | 1G x 8 (2Gx8 class per listing) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Pin Compatibility | Reference (16Gb 2Gx8 FBGA ballout) | Yes - same ordering family | Likely - same family, verify ballout | No - different density ballout | No - different density ballout |
Diferenciadores clave
- 16Gb density halves component count versus 8Gb DDR4 (frente a H5AN8G8NCJR-RDC)
- Drop-in speed-grade flexibility within the same ordering family (frente a H5ANAG8NBJR-PBC)
- Higher speed ceiling available in family siblings (frente a H5ANAG8NBJR-PBC)
Notas de diseño
DDR4 x8 SSTL12 routing requires length matching within ±25 mils class for data groups (DQ, DQS, DM) and controlled fly-by routing for address/command on DIMM-style topologies. Terminate VTT at VDDQ/2 with a dedicated termination regulator and place 0.1 uF decoupling per VDD/VDDQ ball plus bulk 10-47 uF per device. On-die termination (ODT) settings must be trained by the controller per JEDEC DDR4; incorrect ODT is the most common cause of marginal eye diagrams at DDR4-2666. Reference the SK hynix datasheet signal integrity section for ballout-specific guidelines.
Estimated: a 16Gb DDR4 device at DDR4-2666 with moderate activity draws roughly 300-600 mW, plus termination power on VTT that can equal or exceed device power under heavy bus activity. Budget the DDR power tree (1.2V VDD/VDDQ and 0.6V VTT) with 30% headroom and verify VTT regulator transient response during burst read/write turnaround. Power-down and self-refresh modes in the controller's idle policy deliver the largest system-level savings; enable them in firmware rather than sizing the supply only for worst-case active operation.
Do not assume cross-density substitution: the 16Gb (H5ANAG8) and 8Gb (H5AN8G8) families have different ballouts and address configurations per their respective SK hynix datasheets, and the memory controller must explicitly support 16Gb device density including its SPD and training profiles. Verify the speed-grade suffix (-RDC vs -PBC) against the controller's supported latency table before swapping suffixes, and always obtain the ballout map from the manufacturer datasheet rather than from a same-family but different-density drawing.
Información de cumplimiento
Lead-free PBGA packaging per SK hynix 16Gb DDR4 family datasheet. RoHS compliance stated for current-generation SK hynix DRAM; REACH, halogen-free and conflict-minerals declarations should be confirmed from SK hynix environmental documentation for the specific date code.