H5TC4G63MFR-PBA vs H5TC4G63CFR-H9J Comparación
Comparación detallada lado a lado de H5TC4G63MFR-PBA por SK hynix y H5TC4G63CFR-H9J por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5TC4G63MFR-PBA | H5TC4G63CFR-H9J |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,50 | $6,00 |
| Tipo de memoria | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organización de memoria | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | 1.35V +0.100/-0.067V |
| Velocidad de datos | 1866 Mbps (PC3L-14900) | — |
| Encapsulado | 96-ball FBGA | 96-ball TFBGA |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | Yes |
| Speed Grade | — | -H9 (1866 Mbps / PC3-14900) |
| Number of Terminals | — | 96 |
| Temperature Grade | — | Industrial |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Clock Input | — | Fully differential (CK, CK) |
| Data Strobe | — | Differential (DQS, DQS) |
| On-Chip DLL | — | Yes |
| Data Mask (DM) | — | Yes |