HI5812JIBZ-T vs HI5812JIBZ Comparación
Comparación detallada lado a lado de HI5812JIBZ-T por Renesas Electronics y HI5812JIBZ por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
HI5812JIBZ-T - 12-bit, 50kSPS SAR ADC | Renesas / Intersil
HI5812JIBZ-T ✓ ActivoRenesas Electronics
HI5812JIBZ - 12-Bit 50kSPS SAR ADC w/ Track & Hold | Renesas
HI5812JIBZ ✓ ActivoComparación de especificaciones
| Parámetro | HI5812JIBZ-T | HI5812JIBZ |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | ADC/DAC | ADC/DAC |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,95 | $3,18 |
| Resolución | 12 bits | 12 bit |
| Architecture | SAR (Successive Approximation Register) with internal Track-and-Hold | SAR (Successive Approximation) with internal Track-and-Hold |
| Number of Input Channels | 1 single-ended | — |
| Frecuencia de muestreo | 50 kSPS (max) | — |
| Conversion Time | 20 us (max at 5 V supply) | 20 us (typical) |
| Data Interface | Parallel | — |
| Supply Voltage (VDD) | 3 V to 6 V (single supply) | — |
| Supply Current (typ. at 5 V) | 1.9 mA | — |
| Input Type | Single-ended analog input | — |
| Encapsulado / Carcasa | 24-SOIC (0.295 inch / 7.50 mm width) | — |
| Tipo de montaje | Surface Mount | — |
| Temperatura de funcionamiento | -40 C to +85 C | — |
| Power Dissipation (max) | 25 mW | — |
| Packaging | Tape and Reel (TR) | — |
| Estado RoHS | Compliant | Compliant |
| Number of Channels | — | 1 single-ended input |
| Sample Rate | — | 50 kSPS (max) |
| Rango de tensión de entrada | — | 0 V to VREF (unipolar) |
| Reference Voltage (VREF) | — | [DATA_NEEDED: VREF max] |
| Integral Linearity Error (INL) | — | 1.5 LSB (max) |
| Analog Supply Voltage (VDD) | — | +5 V |
| Digital Interface | — | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB |
| Tipo de salida | — | Three-state CMOS, latched across one full conversion |
| Control Inputs/Outputs | — | CONVERT_START (input), DATA_READY (flag) |
| Internal Clock | — | On-chip oscillator |
| Power Dissipation | — | 25 mW |
| Rango de temperatura de funcionamiento | — | -40 C to +85 C |
| Package / Mounting | — | 24-pin SOIC (wide body), surface mount |
| Process Technology | — | High-speed CMOS with thin-film DAC |