HI5812JIBZ-T vs HI5812JIBZ Comparaison
Comparaison détaillée côte à côte de HI5812JIBZ-T par Renesas Electronics et HI5812JIBZ par Renesas Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | HI5812JIBZ-T | HI5812JIBZ |
|---|---|---|
| Marque | Renesas Electronics | Renesas Electronics |
| Catégorie | ADC/DAC | ADC/DAC |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,95 | $3,18 |
| Résolution | 12 bits | 12 bit |
| Architecture | SAR (Successive Approximation Register) with internal Track-and-Hold | SAR (Successive Approximation) with internal Track-and-Hold |
| Number of Input Channels | 1 single-ended | — |
| Fréquence d'échantillonnage | 50 kSPS (max) | — |
| Conversion Time | 20 us (max at 5 V supply) | 20 us (typical) |
| Data Interface | Parallel | — |
| Supply Voltage (VDD) | 3 V to 6 V (single supply) | — |
| Supply Current (typ. at 5 V) | 1.9 mA | — |
| Input Type | Single-ended analog input | — |
| Boîtier / Format | 24-SOIC (0.295 inch / 7.50 mm width) | — |
| Type de montage | Surface Mount | — |
| Température de fonctionnement | -40 C to +85 C | — |
| Power Dissipation (max) | 25 mW | — |
| Packaging | Tape and Reel (TR) | — |
| Statut RoHS | Compliant | Compliant |
| Number of Channels | — | 1 single-ended input |
| Sample Rate | — | 50 kSPS (max) |
| Plage de tension d'entrée | — | 0 V to VREF (unipolar) |
| Reference Voltage (VREF) | — | [DATA_NEEDED: VREF max] |
| Integral Linearity Error (INL) | — | 1.5 LSB (max) |
| Analog Supply Voltage (VDD) | — | +5 V |
| Digital Interface | — | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB |
| Type de sortie | — | Three-state CMOS, latched across one full conversion |
| Control Inputs/Outputs | — | CONVERT_START (input), DATA_READY (flag) |
| Internal Clock | — | On-chip oscillator |
| Power Dissipation | — | 25 mW |
| Plage de température de fonctionnement | — | -40 C to +85 C |
| Package / Mounting | — | 24-pin SOIC (wide body), surface mount |
| Process Technology | — | High-speed CMOS with thin-film DAC |