IAUC100N04S6L014ATMA1 vs IAUCN04S6N009TATMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6L014ATMA1 por Infineon y IAUCN04S6N009TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActivoInfineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N04S6L014ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $1,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40 V |
| Tipo de transistor | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-LHDSO-10-2 (SSO10T) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |