IAUC100N04S6L014ATMA1 vs IAUCN04S6N009TATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC100N04S6L014ATMA1 par Infineon et IAUCN04S6N009TATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActifInfineon
IAUCN04S6N009TATMA1 - 40V 0.9mΩ OptiMOS 6 Auto MOSFET | Infineon
IAUCN04S6N009TATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC100N04S6L014ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,72 | $1,71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40 V |
| Type de transistor | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Plage de température de fonctionnement | -55C to +175C | — |
| Boîtier | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-LHDSO-10-2 (SSO10T) |
| Type de montage | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| Statut RoHS | Compliant | — |
| Niveau MSL | 1 | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |