IAUC100N04S6L014ATMA1 vs IAUCN04S6N009TATMA1 比較
詳細な並列比較: IAUC100N04S6L014ATMA1 メーカー: Infineon および IAUCN04S6N009TATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUC100N04S6L014ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.72 | $1.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | OptiMOS 6 40 V |
| トランジスタタイプ | N-Channel MOSFET | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| 動作温度範囲 | -55C to +175C | — |
| パッケージ | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-LHDSO-10-2 (SSO10T) |
| 実装タイプ | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| RoHS ステータス | Compliant | — |
| MSLレベル | 1 | — |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |