IAUC100N04S6N015ATMA1 vs IPLU300N04S41R1XTMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6N015ATMA1 por Infineon y IPLU300N04S41R1XTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 ✓ ActivoInfineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N04S6N015ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $3,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-6 40V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | — |
| Power Dissipation (P_D @ T_C=25C) | 100 W | — |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction, typical) | — |
| Encapsulado | PG-TDSON-8 (SSO8) 5x6 mm | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited floor life) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Compliant | Yes (Green Product) |
| Lead-Free | Yes | Yes (100% lead-free) |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Temperatura de unión de funcionamiento | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |