IAUC100N10S5L040ATMA1 vs IAUC120N04S6N009ATMA1 Comparación
Comparación detallada lado a lado de IAUC100N10S5L040ATMA1 por Infineon y IAUC120N04S6N009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ ActivoInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N10S5L040ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,94 | $1,60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | OptiMOS 6 40V |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-State Resistance RDS(on) max | 4 mOhm | — |
| Gate Threshold Voltage VGS(th) | Logic Level | — |
| Continuous Power Dissipation (Tc) | 167 W | — |
| Encapsulado | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (junction) | — |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% production avalanche tested | — |
| AOI Compatibility | Feasible for automatic optical inspection | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Corriente de drenador pulsada | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Nivel MSL | — | 1 |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |