IAUC100N10S5L040ATMA1 vs IAUC120N04S6N009ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N10S5L040ATMA1 by Infineon and IAUC120N04S6N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N10S5L040ATMA1
IAUC100N10S5L040ATMA1 - 100V 4mΞ© 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 β ActiveInfineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N10S5L040ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.94 | $1.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) | OptiMOS 6 40V |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| On-State Resistance RDS(on) max | 4 mOhm | β |
| Gate Threshold Voltage VGS(th) | Logic Level | β |
| Continuous Power Dissipation (Tc) | 167 W | β |
| Package | PG-TDSON-8-34 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% production avalanche tested | β |
| AOI Compatibility | Feasible for automatic optical inspection | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 120 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | β | 0.9 mΞ© |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | β | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | β | 150 W |
| Thermal Resistance R_thJC max | β | 1.0 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | 1 |
| RoHS | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes (per Infineon product page) |