IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Comparación
Comparación detallada lado a lado de IAUC100N10S5N040ATMA1 por Infineon y IRLR3410TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC100N10S5N040ATMA1 | IRLR3410TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $0,65 |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 60 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | 22.7 nC |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | — |
| Encapsulado | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount (tape and reel) |
| Nivel MSL | MSL1 (up to 260C peak reflow) | 1 |
| Automotive Qualification | AEC-Q100 qualified | — |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |
| Avalanche Rated | — | Yes (UIS tested) |