IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF Comparison

Detailed side-by-side comparison of IAUC100N10S5N040ATMA1 by Infineon and IRLR3410TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC100N10S5N040ATMA1 IRLR3410TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 HEXFET (5th generation) N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 60 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 22.7 nC
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
Operating Temperature Range -55C to +175C (junction) —
Package PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount (tape and reel)
MSL Level MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
RoHS Status Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
Operating Junction Temperature — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

Datasheets & Resources

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