IAUC100N10S5N040ATMA1 vs IRLR3410TRLPBF 비교

다음의 상세 나란히 비교: IAUC100N10S5N040ATMA1 제조: Infineon 및 IRLR3410TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUC100N10S5N040ATMA1 IRLR3410TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.62 $0.65
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-5 HEXFET (5th generation) N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 100 A (package-limited) —
Pulsed Drain Current (IDM) 400 A 60 A
RDS(on) max @ VGS=10V 4 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 22.7 nC
Maximum Power Dissipation (PD) 167 W @ TC=25C —
Thermal Resistance, Junction-to-Case (RthJC) 0.9 K/W —
동작 온도 범위 -55C to +175C (junction) —
패키지 PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount (tape and reel)
MSL 레벨 MSL1 (up to 260C peak reflow) 1
Automotive Qualification AEC-Q100 qualified —
Avalanche Rating 100% Avalanche tested —
AOI Compatibility Feasible for Automatic Optical Inspection —
RoHS 상태 Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
동작 접합 온도 — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

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